SCT NXP launches RF GaN power transistors for 32T32R active antenna systems

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SCT NXP launches RF GaN power transistors for 32T32R active antenna systems

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NXP Semiconductors N.V. of Eindhoven, The Netherlands has announced a new series of RF power discrete solutions for 32T32R active antenna systems, using its latest proprietary gallium nitride (GaN) technology. The new series complements NXP’s existing portfolio of discrete GaN power amplifier solutions for 64T64R radios, covering all cellular frequency bands from 2.3GHz to 4.0GHz. NXP now offers what is claimed to be the largest RF GaN portfolio for massive multiple input, multiple output (massive MIMO) 5G radios...

Source: http://www.semiconductor-today.com/news ... 0322.shtml
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