Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – says that its EPC2218 100V FETs have been designed into the next-generation M500/14 power optimizer of BRC Solar GmbH of Ettlingen Germany. This has enabled a higher current density due to the low power dissipation and the small size of the GaN FET making the critical load circuit more compact. The small parasitic capacitance and inductance of the GaN FETs creates a clean switching performance, which allows good EMI behavior in the field. Another benefit of the GaN FETs is the zero reverse recovery losses...
Source: https://semiconductor-today.com/news_it ... 0822.shtml