SCT Tagore launches dual-channel ultra-low-noise amplifier with integrated RF switch

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SCT Tagore launches dual-channel ultra-low-noise amplifier with integrated RF switch

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Fabless semiconductor company Tagore Technology Inc – which was founded in January 2011 and has design centers in Arlington Heights, IL, USA and Kolkata, India developing gallium nitride-on-silicon (GaN-on-Si) technology for RF and power management applications – has launched the TSL8329M, a dual-channel low-noise amplifier (LNA) with an integrated RF switch...

Source: https://semiconductor-today.com/news_it ... 0822.shtml
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