GaNo Optoelectronics Inc – a spin-off from China’s Nanjing University that offers ultraviolet (UV) detectors and modules based on wide-bandgap semiconductors including gallium nitride (GaN) and silicon carbide (SiC) – has formally released what it claims are the first commercial SiC-based extreme ultraviolet (EUV) photodiodes...
Source: https://www.semiconductor-today.com/new ... 0922.shtml