SemiQ of Lake Forest, CA, USA – which designs, develops and manufactures SiC components and 150mm SiC epiwafers for high-frequency, high-temperature and high-efficiency power semiconductor devices – has expanded its portfolio of SiC power devices by launching its second-generation silicon carbide power switch, a 1200V 40mΩ SiC MOSFET. This complements the firm’s existing 80mΩ SiC MOSFETs and SiC rectifiers at 650V, 1200V and 1700V...
Source: https://www.semiconductor-today.com/new ... 1022.shtml