SCT Toyoda Gosei makes record diameter GaN substrates, targeting next-gen power devices

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SCT Toyoda Gosei makes record diameter GaN substrates, targeting next-gen power devices

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Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan, together with Osaka University, says that it has succeeded in increasing the diameter of substrates for gallium nitride (GaN) power devices, by leveraging its expertise in GaN semiconductors such as blue LEDs and ultraviolet (UV-C) LEDs...

Source: http://www.semiconductor-today.com/news ... 0322.shtml
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