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SCT Toyoda Gosei makes record diameter GaN substrates, targeting next-gen power devices

Posted: Tue Mar 15, 2022 11:31 am
by admin
Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan, together with Osaka University, says that it has succeeded in increasing the diameter of substrates for gallium nitride (GaN) power devices, by leveraging its expertise in GaN semiconductors such as blue LEDs and ultraviolet (UV-C) LEDs...

Source: http://www.semiconductor-today.com/news ... 0322.shtml