Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has launched the EPC7007, a 200V, 25mΩ, 80APulsed radiation-hardened enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistor (FET) in a small 5.76mm2 footprint. The EPC7007 has a total dose rating greater than 1Mrad and SEE (single event effect) immunity for LET (linear energy transfer) of 85MeV/(mg/cm2). The devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space LLC of Haverhill, MA, USA...
Source: http://www.semiconductor-today.com/news ... 0522.shtml