SCT Sumitomo Electric develops N-polar GaN HEMT using Hf-based gate dielectric
Posted: Thu Oct 27, 2022 4:05 pm
On 17 October at the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) in Phoenix, AZ, USA, Japan’s Sumitomo Electric Industries Ltd (SEI) reported that it had developed a gallium nitride high-electron-mobility transistor (GaN HEMT) that uses N-polar GaN and, for the gate insulating layer, what is reckoned to be the world’s first hafnium (Hf)-based, highly heat-resistant, high-dielectric material, targeting the post-5G era, which will realize even greater capacity and high-speed communications...
Source: https://www.semiconductor-today.com/new ... 1022.shtml
Source: https://www.semiconductor-today.com/new ... 1022.shtml